IRFH5302DTRPBF Datasheet | International Rectifier

IRFH5302DPb F VDS RDS(on) max (@VGS = 10V) VSD max (@IS = 5.0A) trr (typical) ID (@Tc(Bottom) = 25°C) 2.5 mΩ 0.65 V 19 ns h 100 Applications - Synchronous MOSFET for high frequency buck converters Features and Benefits Features Low RDSon (<2.5mΩ) Schottky Intrinsic Diode with Low Forward Voltage Low Thermal Resistance to PCB (<1.2°C/W) 100% Rg tested Low Profile (<0.9 mm) Industry-Standard Pinout patible with Existing Surface Mount Techniques Ro HS pliant Containing no Lead, no Bromide and no Halogen MSL1, Industrial Qualification HEXFET® Power MOSFET PQFN 5X6 mm Benefits Lower Conduction Losses Lower Switching Losses Increased Power Density Increased Reliability results in Increased Power Density ⇒ Multi-Vendor patibility Easier Manufacturing Environmentally Friendlier Increased Reliability Orderable part number Package Type IRFH5302DTRPBF IRFH5302DTR2PBF PQFN 5mm x 6mm PQFN 5mm x 6mm Standard Pack Form Qua nti ty Tape and Reel Tape and Reel Note EOL Notice...