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IRFH5302DPBF - Power MOSFET

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  • Features Low RDSon (.

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IRFH5302DPbF VDS RDS(on) max (@VGS = 10V) VSD max (@IS = 5.0A) trr (typical) ID (@Tc(Bottom) = 25°C) 30 V 2.5 mΩ 0.65 V 19 ns h 100 A Applications • Synchronous MOSFET for high frequency buck converters Features and Benefits Features Low RDSon (<2.5mΩ) Schottky Intrinsic Diode with Low Forward Voltage Low Thermal Resistance to PCB (<1.2°C/W) 100% Rg tested Low Profile (<0.
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