Third Generation HEXFETs from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.
| Part number | IRFD320 |
|---|---|
| Manufacturer | International Rectifier (now Infineon) |
| File Size | 320.14 KB |
| Description | Power MOSFET |
| Datasheet |
 IRFD320 Datasheet
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| Part Number | Description | Manufacturer |
|---|---|---|
| IRFD320 | N-Channel Power MOSFET | Intersil Corporation |
| IRFD320 | Power MOSFET | Vishay |
| IRFD320 | FIELD EFFECT POWER TRANSISTOR | GE |
| IRFD321 | FIELD EFFECT POWER TRANSISTOR | GE |
| IRFD310 | N-Channel Power MOSFET | Intersil Corporation |
| Part Number | Description |
|---|---|
| IRFD310 | Power MOSFET |
| IRFD010 | Transistor |
| IRFD012 | Transistor |
| IRFD014 | Power MOSFET |
| IRFD024 | Power MOSFET |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.
