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IRFD320, SiHFD320
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration
400 VGS = 10 V
20 3.3 11 Single
1.8
D
HVMDIP
S G
D
G
S N-Channel MOSFET
FEATURES • Dynamic dV/dt rating
• Repetitive avalanche rated • For automatic insertion
RoHS
COMPLIANT
• End stackable
• Fast switching
• Ease of paralleling
• Simple drive requirements
• Material categorization: for definitions of compliance please see www.vishay.com/doc?99912
DESCRIPTION
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.