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IRF7807VPBF - Power MOSFET

Description

This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge.

The reduction of conduction and switching losses makes it ideal for high efficiency DC-DC Converters that power the latest generation of mobile microprocessors.

Features

  • E.

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Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRF7807V N-Channel Power MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com PD-95210 IRF7807VPbF • • • • N Channel Application Specific MOSFET Ideal for Mobile DC-DC Converters Low Conduction Losses Low Switching Losses 100% RG Tested Lead-Free HEXFET® Power MOSFET S S S 1 2 3 4 8 7 • • A D D D D 6 5 Description This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduction of conduction and switching losses makes it ideal for high efficiency DC-DC Converters that power the latest generation of mobile microprocessors. A pair of IRF7807V devices provides the best cost/ performance solution for system voltages, such as 3.3V and 5V. G SO-8 T o p V ie w DEVICE CHARACTERISTICS… RDS(on) QG QSW QOSS IRF7807V 17 mΩ 9.5 nC 3.
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