IRF7737L2TRPBF Datasheet | International Rectifier

- 96414 IRF7737L2TRPb F IRF7737L2TR1Pb F - Advanced Process Technology - Optimized for Industrial Motor Drive, DC-DC and - - - - - other Heavy Load Applications Exceptionally Small Footprint and Low Profile High Power Density Low Parasitic Parameters Dual Sided Cooling Repetitive Avalanche Capability for Robustness and Reliability - Lead Free, Ro HS pliant and Halogen Free Direct FET® Power MOSFET ‚ V(BR)DSS 40V RDS(on) typ. 1.5mΩ max. 1.9mΩ ID (Silicon Limited) 156A Qg 89n C S S S D S S S Applicable Direct FET® Outline and Substrate Outline  L6 Direct FET® ISOMETRIC M2 M4 L4 L6 L8 Description The IRF7737L2Pb F bines the latest HEXFET® Power MOSFET Silicon technology with the advanced Direct FET® packaging technology to achieve exceptional performance in a package that has the footprint of a DPak (TO-252AA) and only 0.7 mm profile. The Direct FET® package is patible with existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The Direct FET® package allows dual sided cooling to maximize thermal transfer. This HEXFET® Power MOSFET is designed for applications where efficiency and power density are of value. The advanced Direct FET® packaging platform coupled with the latest silicon technology allows the IRF7737L2Pb F to offer substantial system level savings and performance improvement specifically in motor drive, high frequency DC-DC and other heavy load applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance and low Qg per silicon area. Additional Features of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These Features bine to make this MOSFET a highly efficient, robust and reliable device for high current...