Datasheet4U Logo Datasheet4U.com

IRF7737L2TRPBF - Power MOSFET

Description

The IRF7737L2PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging technology to achieve exceptional performance in a package that has the footprint of a DPak (TO-252AA) and only 0.7 mm profile.

Features

  • of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust and reliable device for high current.

📥 Download Datasheet

Datasheet preview – IRF7737L2TRPBF

📁 Similar Datasheet

  • IRF7704TRPBF - Dual P-Channel MOSFET (VBsemi)
  • IRF7769L1 - Power MOSFET (Infineon)
  • IRF7769L1TRPbF - Power MOSFET (Infineon)
  • IRF710 - N-Channel Power MOSFET (Intersil Corporation)
  • IRF710 - N-Channel MOSFET (INCHANGE)
  • IRF710 - N-Channel MOSFET (ART CHIP)
  • IRF710 - Power MOSFET (Vishay)
  • IRF710A - N-Channel Mosfet Transistor (Inchange Semiconductor)
  • IRF710A - Advanced Power MOSFET (Fairchild Semiconductor)
  • IRF710B - 400V N-Channel MOSFET (Fairchild Semiconductor)
Other Datasheets by International Rectifier

Full PDF Text Transcription

Click to expand full text
PD - 96414 IRF7737L2TRPbF IRF7737L2TR1PbF • Advanced Process Technology • Optimized for Industrial Motor Drive, DC-DC and • • • • • other Heavy Load Applications Exceptionally Small Footprint and Low Profile High Power Density Low Parasitic Parameters Dual Sided Cooling Repetitive Avalanche Capability for Robustness and Reliability • Lead Free, RoHS Compliant and Halogen Free D DirectFET® Power MOSFET ‚ V(BR)DSS 40V RDS(on) typ. 1.5mΩ max. 1.
Published: |