IRF7737L2TR1PBF mosfet equivalent, power mosfet.
of this MOSFET are 175°C operating junction temperature and high repetitive peak current capability. These features combine to make this MOSFET a highly efficient, robust.
Exceptionally Small Footprint and Low Profile High Power Density Low Parasitic Parameters Dual Sided Cooling Repetitive .
The IRF7737L2PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET® packaging technology to achieve exceptional performance in a package that has the footprint of a DPak (TO-252AA) and only 0.7 mm profile. The Di.
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