IRF7316QPBF Datasheet | International Rectifier

Description These HEXFET® Power MOSFET's in a Dual SO-8 package utilize the lastest processing techniques to achieve extremely low onresistance per silicon area. Additional features of these HEXFET Power MOSFET's are a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits bine to make this design an extremely efficient and reliable device for use in a wide variety of applications. The efficient SO-8 package provides enhanced thermal characteristics and dual MOSFET die capability making it ideal in a variety of power applications. This dual, surface mount SO-8 can dramatically reduce board space and is also available in Tape & Reel. - 96126A IRF7316QPb F HEXFET® Power MOSFET S1 1 G1 2 8 D1 7 D1 VDSS = -30V S2 3 6 D2 G2 4 5 D2 RDS(on) = 0.058Ω Top View SO-8 Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted) Symbol Maximum Drain-Source Voltage Gate-Source Voltage Continuous Drain Current… Pulsed Drain Current TA = 25°C TA = 70°C Continuous Source Current (Diode Conduction) Maximum Power Dissipation … Single Pulse Avalanche Energy TA = 25°C TA = 70°C VDS VGS IDM IS -30 ± 20 -4.9 -3.9 -30 -2.5 2.0 1.3 140 Avalanche Current IAR -2.8 Repetitive Avalanche Energy Peak Diode Recovery dv/dt - EAR dv/dt 0.20 -5.0 Junction and Storage Temperature Range TJ, TSTG -55 to + 150 Units...