Download the IRF6797MTRPbF datasheet PDF.
This datasheet also covers the IRF6797MPbF variant, as both devices belong to the same hexfet power mosfet plus schottky diode family and are provided as variant models within a single manufacturer datasheet.
Description
The IRF6797MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.
Features
- ypical Source-Drain Diode Forward Voltage
220 200 180 160 140 120 100
80 60 40 20
0 25 50 75 100 125 150 TC , Case Temperature (°C)
Fig 12. Maximum Drain Current vs. Case Temperature
1200
1000
800
Typical V GS(th) Gate threshold Voltage (V)
ID, Drain-to-Source Current (A)
1000 100 10
IRF6797MTRPbF.