IRF6797MTRPbF diode equivalent, hexfet power mosfet plus schottky diode.
)
1
2.5V
0.1 0.1
1
≤60µs PULSE WIDTH Tj = 25°C
10 100
VDS, Drain-to-Source Voltage (V)
Fig 4. Typical Output Characteristics
1000 100
VDS = 15V ≤60µs PULSE WIDTH
.
PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is follo.
The IRF6797MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET packag.
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