IRF6729MPBF mosfet equivalent, power mosfet.
V
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
100
100
BOTTOM
10
BOTTOM
1
10 2.5V
0.1
2.5V
≤60µs PULSE WIDTH
0.01 0.1 1 Tj = 25°C 1 100 0.1 .
PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is follo.
The IRF6729MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET packag.
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