IRF6727MPBF mosfet equivalent, power mosfet.
100 T J = 150°C T J = 25°C T J = -40°C
Typical RDS(on) (Normalized)
VDS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 5. Typical Output Characteri.
PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is .
The IRF6727MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFET TM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET pac.
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