IRF6722SPBF mosfet equivalent, power mosfet.
00 T J = 150°C 10 T J = 25°C T J = -40°C
Typical RDS(on) (Normalized)
Fig 5. Typical Output Characteristics
2.0 ID = 13A V GS = 10V V GS = 4.5V 1.5
ID, Drain-to-Source .
PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is .
The IRF6722SPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET pack.
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