IRF6726MPBF mosfet equivalent, power mosfet.
= -40°C
VDS, Drain-to-Source Voltage (V)
V DS, Drain-to-Source Voltage (V)
Fig 5. Typical Output Characteristics
2.0 ID = 32A
Typical RDS(on) (Normalized)
ID, Drain-t.
PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is .
The IRF6726MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET pack.
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