IRF6725MTRPBF, IRF6725MPBF Datasheet - International Rectifier

IRF6725MTRPBF Power MOSFET

The IRF6725MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a MICRO-8 and only 0.7 mm profile. The DirectFET package is compatible with existing layout geometries .

PD - 96120 IRF6725MPbF IRF6725MTRPbF l l l l l l l l l l RoHS Compliant Containing No Lead and Bromide Low Profile (<0.7 mm) Dual Sided Cooling Compatible Ultra Low Package Inductance Optimized for High Frequency Switching Ideal for CPU Core DC-DC Converters Optimized for both Sync.FET and some Control FET application Low Conduction and Switching Losses Compatible with existing Surface Mount Techniques 100% Rg tested Typical values (unless otherwise specified) DirectFET Power MOSFE.

IRF6725MTRPBF Features

* .00 VDS, Drain-to-Source Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage Typical VGS(th) Gate threshold Voltage (V) 180 160 140 ID, Drain Current (A) Fig11. Maximum Safe Operating Area 3.0 2.5 120 100 80 60 40 20 0 25 50 75 100 125 150 T C , Case Temperature (°C) 2.0 ID = 100µA I

IRF6725MPBF_InternationalRectifier.pdf