IRF6715MPbF mosfet equivalent, power mosfet.
0V 2.8V 2.5V
2.5V 1
≤60µs PULSE WIDTH Tj = 150°C 0.1 0.1 1 10 100 1000 VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Output Characteristics
2.0 ID = 34A
1.5 VGS = 10V.
PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is .
The IRF6715MPbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.6 mm profile. The DirectFET packag.
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