IRF6691TRPBF, IRF6691PBF - Power MOSFET

International Rectifier

IRF6691TRPBF Datasheet Preview — This datasheet PDF includes multiple part numbers: IRF6691TRPBF, IRF6691PBF. Please refer to the document for exact specifications by model.

Datasheet Details

Part number	IRF6691TRPBF, IRF6691PBF
Manufacturer	International Rectifier ↗
File Size	660.69 KB
Description	Power MOSFET
Datasheet	IRF6691PBF-InternationalRectifier.pdf
Note	This datasheet PDF includes multiple part numbers: IRF6691TRPBF, IRF6691PBF. Please refer to the document for exact specifications by model.

IRF6691TRPBF Product details

Description

The IRF6691PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.

Features

, Reverse Drain Current (A) 100 100µsec 10 T A = 25°C Tj = 150°C Single Pulse 1 0 1 10 1msec 1 0.0 0.2 0.4 0.6 0.8 VGS = 0V 1.0 1.2 10msec 100 VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 9. Typical Source-Drain Diode Forward Voltage 200 Fig10. Maximum Safe Operating Area 2.5 ID, Drain Current (A) 150 125 100 75 50 25 0 25 50 75 100 125 150 T C , Case Temperature (°C) VGS(th) Gate threshold Voltage (V) 175 2.0 ID = 250µA 1.5 1.0 -75 -50 -25 0 25 50 75.

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Published: Apr 1, 2014 |