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IRF6691PBF - Power MOSFET

Description

The IRF6691PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.

Features

  • , Reverse Drain Current (A) 100 100µsec 10 T A = 25°C Tj = 150°C Single Pulse 1 0 1 10 1msec 1 0.0 0.2 0.4 0.6 0.8 VGS = 0V 1.0 1.2 10msec 100 VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 9. Typical Source-Drain Diode Forward Voltage 200 Fig10. Maximum Safe Operating Area 2.5 ID, Drain Current (A) 150 125 100 75 50 25 0 25 50 75 100 125 150 T C , Case Temperature (°C) VGS(th) Gate threshold Voltage (V) 175 2.0 ID = 250µA 1.5 1.0 -75 -50 -25 0 25 50 75.

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Other Datasheets by International Rectifier (now Infineon)

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IRF6691 HEXFET Power MOSFET
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Full PDF Text Transcription

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PD - 97204 PROVISIONAL l l l l l l l l l RoHs Compliant  Lead-Free (Qualified up to 260°C Reflow) Application Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses High Cdv/dt Immunity Low Profile (<0.7mm) Dual Sided Cooling Compatible  Compatible with existing Surface Mount Techniques  Typical values (unless otherwise specified) DirectFET™ Power MOSFET ‚ RDS(on) Qrr 26nC IRF6691PbF IRF6691TRPbF RDS(on) Vgs(th) 2.0V VDSS tot VGS 20V max ±12V max 1.2mΩ@ 10V 1.8mΩ@ 4.5V Qg Qgd 15nC Qgs2 4.4nC Qoss 30nC 47nC Applicable DirectFET Outline and Substrate Outline (see p.
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