IRF6637TRPBF, IRF6637PBF - Power MOSFET

International Rectifier

IRF6637TRPBF Datasheet Preview — This datasheet PDF includes multiple part numbers: IRF6637TRPBF, IRF6637PBF. Please refer to the document for exact specifications by model.

Datasheet Details

Part number	IRF6637TRPBF, IRF6637PBF
Manufacturer	International Rectifier ↗
File Size	287.79 KB
Description	Power MOSFET
Datasheet	IRF6637PBF-InternationalRectifier.pdf
Note	This datasheet PDF includes multiple part numbers: IRF6637TRPBF, IRF6637PBF. Please refer to the document for exact specifications by model.

IRF6637TRPBF Product details

Description

The IRF6637PbF combines the latest HEXFET® power MOSFET silicon technology with advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile.

Features

ltage (V) 1 10msec TA = 25°C Tj = 150°C Single Pulse 0.10 1.00 10.00 100.00 0.1 VDS , Drain-to-Source Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage Typical VGS(th) Gate Threshold Voltage (V) Fig11. Maximum Safe Operating Area 2.5 60 50 ID, Drain Current (A) 40 30 20 10 0 25 50 75 100 125 150 TC , Case Temperature (°C) 2.0 ID = 250µA 1.5 1.0 -75 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature ( °C ) Fig 12. Maximum Drain Current vs. Case Temperature 160 Fig.

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Published: Apr 1, 2014 |