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International Rectifier Electronic Components Datasheet

IRF6637TRPBF Datasheet

Power MOSFET

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l RoHS Compliant 
l Lead-Free (Qualified up to 260°C Reflow)
l Application Specific MOSFETs
l Ideal for CPU Core DC-DC Converters
l Low Conduction Losses and Switching Losses
l Low Profile (<0.7mm)
l Dual Sided Cooling Compatible 
l Compatible with existing Surface Mount Techniques 
PD - 97088
IRF6637PbF
IRF6637TRPbF
DirectFET™ Power MOSFET ‚
Typical values (unless otherwise specified)
VDSS
VGS
RDS(on)
RDS(on)
30V max ±20V max 5.7m@ 10V 8.2m@ 4.5V
Qg tot Qgd Qgs2 Qrr Qoss Vgs(th)
11nC 4.0nC 1.0nC 20nC 9.9nC 1.8V
MP
DirectFET™ ISOMETRIC
Applicable DirectFET Outline and Substrate Outline (see p.7,8 for details)
SQ SX ST
MQ MX MT MP
Description
The IRF6637PbF combines the latest HEXFET® power MOSFET silicon technology with advanced DirectFETTM packaging to achieve the
lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package is compatible with
existing layout geometries used in power applications, PCB assembly equipment and vapor phase, infra-red or convection soldering tech-
niques, when application note AN-1035 is followed regarding the manufacturing methods and processes. The DirectFET package allows dual
sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%.
The IRF6637PbF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction and
switching losses. The reduced total losses make this product ideal for high efficiency DC-DC converters that power the latest generation of
processors operating at higher frequencies. The IRF6637PbF has been optimized for parameters that are critical in synchronous buck
operating from 12 volt bus converters including RDS(on) and gate charge to minimize losses in the control FET socket.
Absolute Maximum Ratings
Parameter
Max.
Units
VDS Drain-to-Source Voltage
30 V
VGS
ID @ TA = 25°C
ID @ TA = 70°C
ID @ TC = 25°C
IDM
EAS
IAR
Gate-to-Source Voltage
eContinuous Drain Current, VGS @ 10V
eContinuous Drain Current, VGS @ 10V
fContinuous Drain Current, VGS @ 10V
gPulsed Drain Current
hSingle Pulse Avalanche Energy
ÃgAvalanche Current
±20
14
11 A
59
110
31 mJ
11 A
25 12
20
ID = 14A
10 ID= 11A
VDS= 24V
VDS= 15V
8
15
TJ = 125°C
10
5
2.0
TJ = 25°C
4.0 6.0 8.0
VGS, Gate-to-Source Voltage (V)
10.0
Fig 1. Typical On-Resistance Vs. Gate Voltage
Notes:
 Click on this section to link to the appropriate technical paper.
‚ Click on this section to link to the DirectFET Website.
ƒ Surface mounted on 1 in. square Cu board, steady state.
www.irf.com
6
4
2
0
0 4 8 12 16 20 24
QG Total Gate Charge (nC)
Fig 2. Typical Total Gate Charge vs Gate-to-Source Voltage
„ TC measured with thermocouple mounted to top (Drain) of part.
… Repetitive rating; pulse width limited by max. junction temperature.
† Starting TJ = 25°C, L = 0.52mH, RG = 25, IAS = 11A.
1
5/5/06
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International Rectifier Electronic Components Datasheet

IRF6637TRPBF Datasheet

Power MOSFET

No Preview Available !

IRF6637PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Min.
BVDSS
∆ΒVDSS/TJ
RDS(on)
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
30
–––
–––
–––
VGS(th)
VGS(th)/TJ
IDSS
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
Drain-to-Source Leakage Current
1.35
–––
–––
–––
IGSS
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
gfs Forward Transconductance
38
Qg Total Gate Charge
Qgs1 Pre-Vth Gate-to-Source Charge
Qgs2 Post-Vth Gate-to-Source Charge
Qgd Gate-to-Drain Charge
Qgodr
Gate Charge Overdrive
Qsw Switch Charge (Qgs2 + Qgd)
Qoss Output Charge
RG Gate Resistance
td(on)
Turn-On Delay Time
tr Rise Time
td(off)
Turn-Off Delay Time
tf Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Diode Characteristics
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Parameter
Min.
IS Continuous Source Current –––
(Body Diode)
ISM Pulsed Source Current
(Body Diode) g
–––
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse Recovery Charge
–––
–––
–––
Typ.
–––
26
5.7
8.2
1.8
-5.4
–––
–––
–––
–––
–––
11
3.1
1.0
4.0
2.9
5.0
9.9
1.2
12
15
14
3.8
1330
430
150
Typ.
–––
–––
–––
13
20
Max. Units
Conditions
–––
–––
7.7
10.8
2.35
–––
V VGS = 0V, ID = 250µA
mV/°C Reference to 25°C, ID = 1mA
mVGS = 10V, ID = 14A i
VGS = 4.5V, ID = 11A i
V VDS = VGS, ID = 250µA
mV/°C
1.0
150
100
-100
–––
µA VDS = 24V, VGS = 0V
VDS = 24V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
S VDS = 15V, ID = 11A
17
––– VDS = 15V
––– nC VGS = 4.5V
6.0 ID = 11A
––– See Fig. 15
–––
––– nC VDS = 16V, VGS = 0V
–––
––– VDD = 16V, VGS = 4.5V i
––– ID = 11A
––– ns Clamped Inductive Load
–––
––– VGS = 0V
––– pF VDS = 15V
––– ƒ = 1.0MHz
Max. Units
Conditions
53 MOSFET symbol
A showing the
110 integral reverse
p-n junction diode.
1.0 V TJ = 25°C, IS = 11A, VGS = 0V i
20 ns TJ = 25°C, IF = 11A
30 nC di/dt = 500A/µs i
Notes:
… Repetitive rating; pulse width limited by max. junction temperature.
‡ Pulse width 400µs; duty cycle 2%.
2
www.irf.com
Free Datasheet http://www.Datasheet4U.com


Part Number IRF6637TRPBF
Description Power MOSFET
Maker International Rectifier
Total Page 10 Pages
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