IRF6635TRPbF mosfet equivalent, directfet power mosfet.
WIDTH 100 T J = 150°C 10 T J = 25°C T J = -40°C
Typical RDS(on) (Normalized)
Fig 5. Typical Output Characteristics
1.5 ID = 32A
ID, Drain-to-Source Current (Α)
1.0
1
.
PCB assembly equipment and vapor phase, infra-red or convection soldering techniques. Application note AN-1035 is follo.
The IRF6635PbF combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve the lowest on-state resistance in a package that has the footprint of a SO-8 and only 0.7 mm profile. The DirectFET package .
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