0 ≤ 60µs PULSE WIDTH Tj = 150°C 1 0.1 1 10 100 VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V) Fig 4. Typical Output Characteristics 1000 Fig 5. Ty.

PCB assembly equipment and vapor phase, infra-red or convection soldering techniques, when application note AN-1035 is .

The IRF6616 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve low combined on-state and switching loss in a package that has the footprint area of an SO-8 and only 0.7mm profile. The Direct.

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts