Datasheet4U Logo Datasheet4U.com

IRF6616TRPBF - Power MOSFET

This page provides the datasheet information for the IRF6616TRPBF, a member of the IRF6616PBF Power MOSFET family.

Description

The IRF6616 combines the latest HEXFET® Power MOSFET Silicon technology with the advanced DirectFETTM packaging to achieve low combined on-state and switching loss in a package that has the footprint area of an SO-8 and only 0.7mm profile.

Features

  • e Pulse 0 1 10 100 1000 1.00 1 0.10 VGS = 0V 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 VSD, Source-to-Drain Voltage (V) 0.1 VDS , Drain-to-Source Voltage (V) Fig 10. Typical Source-Drain Diode Forward Voltage 120 100 ID, Drain Current (A) Typical VGS(th) Gate threshold Voltage (V) 2.5 Fig11. Maximum Safe Operating Area 80 60 40 20 0 25 50 75 100 125 150 T C , Case Temperature (°C) 2.0 ID = 250µA 1.5 1.0 -75 -50 -25 0 25 50 75 100 125 150 T J , Junction Temperature ( °C ) Fig.

📥 Download Datasheet

Datasheet preview – IRF6616TRPBF

📁 Similar Datasheet

Other Datasheets by International Rectifier

Full PDF Text Transcription

Click to expand full text
IRF6616PbF IRF6616TRPbF RoHS compliant containing no lead or bormide  l Low Profile (<0.7 mm) l Dual Sided Cooling Compatible  l Ultra Low Package Inductance l Optimized for High Frequency Switching  l Low Conduction and Switching Losses l Compatible with existing Surface Mount Techniques  l Lead-Free l PD - 96100 Typical values (unless otherwise specified) DirectFET™ Power MOSFET ‚ VDSS VGS RDS(on) RDS(on) 40V max ±20V max 3.7mΩ@ 10V 4.6mΩ@ 4.5V Qg tot Qgd 9.4nC Qgs2 2.4nC Qrr 33nC Qoss 15nC Vgs(th) 1.8V 29nC MX Applicable DirectFET Outline and Substrate Outline (see p.
Published: |