Description
The IRF6616 combines the latest.
Features
- e Pulse 0 1 10 100 1000
1.00
1
0.10
VGS = 0V 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 VSD, Source-to-Drain Voltage (V)
0.1 VDS , Drain-to-Source Voltage (V)
Fig 10. Typical Source-Drain Diode Forward Voltage
120 100
ID, Drain Current (A)
Typical VGS(th) Gate threshold Voltage (V)
2.5
Fig11. Maximum Safe Operating Area
80 60 40 20 0 25 50 75 100 125 150 T C , Case Temperature (°C)
2.0
ID = 250µA
1.5
1.0 -75 -50 -25 0 25 50 75 100 125 150
T J , Junction Temperature ( °C )
Fig.
