IRF630NPBF Datasheet Power MOSFET

Manufacturer: International Rectifier (now Infineon)

Overview: l Advanced Process Technology l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Part number	IRF630NPBF
Manufacturer	International Rectifier (now Infineon)
File Size	335.15 KB
Description	Power MOSFET
Datasheet	IRF630NPBF IRF630NLPBF Datasheet (PDF)

General Description

Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts.

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Similar Datasheet

Part Number	Description	Manufacturer
IRF630N	N-Channel MOSFET	INCHANGE
IRF630NL	N-Channel MOSFET	INCHANGE
IRF630NS	N-Channel MOSFET	INCHANGE
IRF630NSTRRPBF	N-Channel MOSFET	INCHANGE
IRF630	N-channel MOSFET	STMicroelectronics

More Datasheets from International Rectifier (now Infineon)

Part Number	Description
IRF630N	Power MOSFET
IRF630NL	Power MOSFET
IRF630NLPBF	Power MOSFET
IRF630NS	Power MOSFET
IRF630NSPBF	Power MOSFET
IRF630PBF	POWER MOSFET
IRF634	Power MOSFET
IRF634N	Power MOSFET
IRF634NL	Power MOSFET
IRF634NLPbF	HEXFET Power MOSFET