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IRF630NSTRRPBF - N-Channel MOSFET

General Description

Drain Current ID=9.3A@ TC=25℃ Drain Source Voltage- : VDSS= 200V(Min) Static Drain-Source On-Resistance : RDS(on) = 0.3Ω(Max) Fast Switching Speed Low Drive Requirement Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICAT

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isc N-Channel MOSFET Transistor INCHANGE Semiconductor IRF630NSTRRPBF DESCRIPTION ·Drain Current –ID=9.3A@ TC=25℃ ·Drain Source Voltage- : VDSS= 200V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 0.3Ω(Max) ·Fast Switching Speed ·Low Drive Requirement ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·This device is n-channel, enhancement mode, power MOSFET designed especially for high power, high speed applications, such as switching power supplies,UPS, AC and DC motor controls, relay and solenoid drivers and high energy pulse circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 200 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 9.