IRF2907ZSPbF mosfet equivalent, power mosfet.
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IRF2907ZPbF IRF2907ZSPbF IRF2907ZLPbF
HEXFET® Power MOSFET
D
Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching .
ID = 160A∗
D2 Pak IRF2907ZPbF IRF2907ZSPbF
TO-262 IRF2907ZLPbF
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C ID.
This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive .
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