l l l l l Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax HEXFET® Power MOSFET D.

this HEXFET® Power MOSFET utilizes the latest processing techniques and advanced packaging technology to achieve extrem.

Specifically designed for high current, high reliability applications, this HEXFET® Power MOSFET utilizes the latest processing techniques and advanced packaging technology to achieve extremely low on-resistance and world -class current ratings. Addi.

IRF2907ZS

IRF2907ZSPbF

IRF2907Z

IRF2907ZL

IRF2907ZLPbF

IRF2907ZPbF

IRF2907LPbF

IRF2907SLPbF

IRF2903Z

IRF2903ZL

IRF2903ZLPBF

IRF2903ZPBF

IRF2903ZS

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