l l l l l l IRF2907ZPbF IRF2907ZSPbF IRF2907ZLPbF HEXFET® Power MOSFET D Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching .

ID = 160A∗ D2 Pak IRF2907ZPbF IRF2907ZSPbF TO-262 IRF2907ZLPbF Absolute Maximum Ratings Parameter ID @ TC = 25°C ID.

This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive .

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