IRF1503SPBF mosfet equivalent, power mosfet.
of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this.
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IRF1503SPbF IRF1503LPbF
HEXFET® Power MOSFET
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Benefits
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VDSS = 30V RDS(on) = 3.3mΩ.
This Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast sw.
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