IRF1503LPBF Datasheet, International Rectifier

of this HEXFET power MOSFET are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These benefits combine to make this.

l Industrial Motor Drive IRF1503SPbF IRF1503LPbF HEXFET® Power MOSFET D Benefits l l l l l VDSS = 30V RDS(on) = 3.3mΩ.

This Stripe Planar design of HEXFET® Power MOSFETs utilizes the lastest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this HEXFET power MOSFET are a 175°C junction operating temperature, fast sw.