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IRF1404ZPBF - POWER MOSFET

Download the IRF1404ZPBF datasheet PDF. This datasheet also covers the IRF1404Z variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area.

Key Features

  • l l l l l l IRF1404ZPbF IRF1404ZSPbF IRF1404ZLPbF HEXFET® Power MOSFET D Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free G VDSS = 40V RDS(on) = 3.7mΩ S.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IRF1404Z_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
IRF1404Z N-Channel MOSFET Kexin
IRF1404Z N-Channel MOSFET INCHANGE
IRF1404ZS N-Channel MOSFET INCHANGE
IRF1404 N-Channel MOSFET Transistor Inchange Semiconductor
IRF1404S N-Channel MOSFET INCHANGE

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
IRF1404Z Power MOSFET
IRF1404ZGPBF Power MOSFET
IRF1404ZL Power MOSFET
IRF1404ZLPBF POWER MOSFET
IRF1404ZS Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com AUTOMOTIVE MOSFET PD - 96040 Features l l l l l l IRF1404ZPbF IRF1404ZSPbF IRF1404ZLPbF HEXFET® Power MOSFET D Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free G VDSS = 40V RDS(on) = 3.7mΩ S Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating .