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International Rectifier Electronic Components Datasheet

IRF1404 Datasheet

Power MOSFET

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l Advanced Process Technology
l Ultra Low On-Resistance
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Automotive Qualified (Q101)
Description
Seventh Generation HEXFET® Power MOSFETs from
International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per
silicon area. This benefit, combined with the fast
switching speed and ruggedized device design that
HEXFET power MOSFETs are well known for, provides
the designer with an extremely efficient and reliable
device for use in a wide variety of applications including
automotive.
The TO-220 package is universally preferred for all
automotive-commercial-industrial applications at power
dissipation levels to approximately 50 watts. The low
thermal resistance and low package cost of the TO-220
contribute to its wide acceptance throughout the industry.
Absolute Maximum Ratings
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Parameter
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current 
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy‡
Peak Diode Recovery dv/dt ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting Torque, 6-32 or M3 screw
Thermal Resistance
RθJC
RθCS
RθJA
www.irf.com
Parameter
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
G
PD-91896F
IRF1404
HEXFET® Power MOSFET
D
VDSS = 40V
RDS(on) = 0.004
S ID = 202A†
TO-220AB
Max.
202†
143†
808
333
2.2
± 20
620
See Fig.12a, 12b, 15, 16
1.5
-55 to + 175
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Typ.
–––
0.50
–––
Max.
0.45
–––
62
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Units
°C/W
1
10/10/03


International Rectifier Electronic Components Datasheet

IRF1404 Datasheet

Power MOSFET

No Preview Available !

IRF1404
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
IDSS Drain-to-Source Leakage Current
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
LD Internal Drain Inductance
LS
Ciss
Coss
Crss
Coss
Coss
Coss eff.
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Output Capacitance
Output Capacitance
Effective Output Capacitance …
Min. Typ. Max.
40 ––– –––
––– 0.039 –––
––– 0.0035 0.004
2.0 ––– 4.0
76 ––– –––
––– ––– 20
––– ––– 250
––– ––– 200
––– ––– -200
––– 131 196
––– 36 –––
––– 37 56
––– 17 –––
––– 190 –––
––– 46 –––
––– 33 –––
––– 4.5 –––
––– 7.5 –––
––– 5669 –––
––– 1659 –––
––– 223 –––
––– 6205 –––
––– 1467 –––
––– 2249 –––
Units
V
V/°C
V
S
µA
nA
nC
ns
nH
pF
Conditions
VGS = 0V, ID = 250µA
Reference to 25°C, ID = 1mA
VGS = 10V, ID = 121A „
VDS = 10V, ID = 250µA
VDS = 25V, ID = 121A
VDS = 40V, VGS = 0V
VDS = 32V, VGS = 0V, TJ = 150°C
VGS = 20V
VGS = -20V
ID = 121A
VDS = 32V
VGS = 10V„
VDD = 20V
ID = 121A
RG = 2.5
RD = 0.2„
Between lead,
D
6mm (0.25in.)
from package
G
and center of die contact
VGS = 0V
VDS = 25V
ƒ = 1.0MHz, See Fig. 5
S
VGS = 0V, VDS = 1.0V, ƒ = 1.0MHz
VGS = 0V, VDS = 32V, ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 32V
Source-Drain Ratings and Characteristics
Parameter
IS Continuous Source Current
(Body Diode)
ISM Pulsed Source Current
(Body Diode) 
VSD Diode Forward Voltage
trr Reverse Recovery Time
Qrr Reverse RecoveryCharge
ton Forward Turn-On Time
Notes:
 Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
‚ Starting TJ = 25°C, L = 85µH
RG = 25, IAS = 121A. (See Figure 12)
ƒ ISD 121A, di/dt 130A/µs, VDD V(BR)DSS,
TJ 175°C
2
Min. Typ. Max. Units
Conditions
––– ––– 202†
––– ––– 808
A
MOSFET symbol
showing the
integral reverse
p-n junction diode.
G
D
S
––– ––– 1.5 V TJ = 25°C, IS = 121A, VGS = 0V „
––– 78 117 ns TJ = 25°C, IF = 121A
––– 163 245 nC di/dt = 100A/µs „
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
„ Pulse width 400µs; duty cycle 2%.
… Coss eff. is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS
† Calculated continuous current based on maximum allowable
junction temperature. Package limitation current is 75A.
www.irf.com


Part Number IRF1404
Description Power MOSFET
Maker International Rectifier
Total Page 9 Pages
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