F1010N mosfet equivalent, power mosfet.
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ID
Charge
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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IRF1010N
Peak Diode Recovery dv/.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to a.
Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET .
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