AUIRLU3114Z mosfet equivalent, power mosfet.
l Advanced Process Technology l Ultra Low On-Resistance l 175°C Operating Temperature
D VDSS RDS(on) max @ 10V
40V 4.9mΩ
l Fast Switching l Repetitive Avalanche Allow.
this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon .
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperat.
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