AUIRLU2905 mosfet equivalent, hexfet power mosfet.
(V)
100 10μs
100μs
10 1ms
TC = 25°C
STJing=le
175°C Pulse
1
10ms
A
1 10 100
VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltag.
this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance pe.
Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggediz.
Image gallery
TAGS
Download (Size : 246.27KB)