AUIRFU8401 mosfet equivalent, power mosfet.
l Advanced Process Technology
l New Ultra Low On-Resistance
l 175°C Operating Temperature
l Fast Switching
l Repetitive Avalanche Allowed up to Tjmax
l Lead-Free, RoHS Co.
this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon .
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperat.
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