AUIRFU8401 mosfet equivalent, power mosfet.
* Advanced Process Technology
* New Ultra Low On-Resistance
*175°C Operating Temperature
* Fast Switching
* Repetitive Avalanche Allowed up to Tj.
this HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low onresistance per silicon area. This.
Specifically designed for Automotive applications, this HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low onresistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design tha.
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