AUIRFU4615 mosfet equivalent, power mosfet.
Advanced Process Technology l Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Compliant l Au.
this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon .
Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperat.
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