l l l l l l l HEXFET® Power MOSFET D AUIRFR4104 AUIRFU4104 40V 5.5mΩ 119A 42A Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Swit.

this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon .

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating tempera.

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