Advanced Process Technology l New Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free, RoHS Comp.

l l Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniq.

40V typ. 1.4mΩ (SMD version) max 1.8mΩ ID (Silicon Limited) 250A ID (Package Limited) D D VDSS RDS(on) c Applications l l Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to a.

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts