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AUIRFS8409 - HEXFET Power MOSFET

Download the AUIRFS8409 datasheet PDF. This datasheet also covers the AUIRFB8409 variant, as both devices belong to the same hexfet power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Key Features

  • l l l l l l l AUIRFB8409 AUIRFS8409 AUIRFSL8409 HEXFET® Power MOSFET D Advanced Process Technology New Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified.
  • G S VDSS 40V RDS(on) (SMD) typ. 0.97mΩ max. 1.2mΩ 409A ID (Silicon Limited) ID (Package Limited) 195A c.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AUIRFB8409_InternationalRectifier.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
AUIRFS3004 Power MOSFET Infineon
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AUIRFS3206 Power MOSFET Infineon
AUIRFS3607 Power MOSFET Infineon

Other Datasheets by International Rectifier (now Infineon)

Part Number Description
AUIRFS8403 Power MOSFET
AUIRFS8405 Power MOSFET
AUIRFS8407 Power MOSFET
AUIRFS8407-7P Power MOSFET
AUIRFS8408 Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
AUTOMOTIVE GRADE Features l l l l l l l AUIRFB8409 AUIRFS8409 AUIRFSL8409 HEXFET® Power MOSFET D Advanced Process Technology New Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified * G S VDSS 40V RDS(on) (SMD) typ. 0.97mΩ max. 1.2mΩ 409A ID (Silicon Limited) ID (Package Limited) 195A c Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating.