| Description | Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable de... |
| Features |
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AUIRFS3307Z AUIRFSL3307Z
HEXFET® Power MOSFET
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Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Automotive Qualified *
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VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited)
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75V 4.6mΩ 5.8mΩ 128A 120A...
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| Datasheet |
 AUIRFS3307Z Datasheet - 296.34KB |
