AUIRFS3107 Datasheet | Infineon

Features - Advanced Process Technology - Ultra Low On-Resistance - Enhanced d V/d T and d I/d T capability - 175°C Operating Temperature - Fast Switching - Repetitive Avalanche Allowed up to Tjmax - Lead-Free, Ro HS pliant - Automotive Qualified - Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features bine to make this design an extremely efficient and reliable device for use in Automotive applications and a wide variety of other applications HEXFET® Power MOSFET VDSS RDS(on) typ. max. ID (Silicon Limited) ID (Package Limited) 75V 2.5m 3.0m 230A 195A D2-Pak AUIRFS3107 S GD TO-262 AUIRFSL3107 G Gate D Drain S Source Base part number AUIRFSL3107 AUIRFS3107 Package Type TO-262 D2-Pak Standard Pack Form Quantity Tube Tube Tape and Reel Left Orderable Part Number AUIRFSL3107 AUIRFS3107 AUIRFS3107TRL Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. Ambient temperature (TA) is 25°C, unless otherwise specified. Symbol ID @ TC = 25°C ID @ TC = 100°C ID @ TC = 25°C IDM PD @TC =...