l Advanced Planar Technology l Low On-Resistance l P-Channel l Dynamic dV/dT Rating l 150°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Repetitive Av.

this Cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low onresistance per.

Specifically designed for Automotive applications, this Cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low onresistance per silicon area. This benefit combined with the fast switching speed and ruggedize.

AUIRFR5305

AUIRFR540Z

AUIRFR5410

AUIRFR024N

AUIRFR1010Z

AUIRFR1018E

AUIRFR120Z

AUIRFR2307Z

AUIRFR2405

AUIRFR2407

AUIRFR2607Z

AUIRFR2905Z

AUIRFR3504

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