AUIRFR5410
AUIRFR5410 is Power MOSFET manufactured by Infineon.
eatures
- Advanced Planar Technology
- P-Channel MOSFET
- Low On-Resistance
- Dynamic d V/d T Rating
- 175°C Operating Temperature
- Fast Switching
- Fully Avalanche Rated
- Repetitive Avalanche Allowed up to Tjmax
- Lead-Free, Ro HS pliant
- Automotive Qualified
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Description Specifically designed for Automotive applications, this Cellular Planar design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit bined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in Automotive and a wide variety of other applications.
VDSS RDS(on) ID
HEXFET® Power MOSFET -100V max.
0.205
-13A
G Gate
S G D-Pak AUIRFR5410
D Drain
S Source
Base part number AUIRFR5410
Package Type D-Pak
Standard Pack
Form
Quantity
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