AUIRFIZ34N mosfet equivalent, power mosfet.
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Advanced Planar Technology Low On-Resistance Isolated Package High Voltage Isolation = 2.5KVRMS
Sink to Lead Creepage Distantce = 4.8mm 175°C Operatin.
this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance pe.
Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggediz.
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