AUIRFI4905 datasheet, mosfet equivalent, International Rectifier

Features and benefits

* Advanced Planar Technology
* P-Channel MOSFET
* Low On-Resistance
* Dynamic dV/dT Rating
* 175°C Operating Temperature
* Fast Switching

Application

this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance pe.

Description

Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed an ruggedize.

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