AUIRF5210S mosfet equivalent, power mosfet.
l l l l l l l l
Advanced Planar Technology P-Channel MOSFET Low On-Resistance
Dynamic dV/dT Rating
D
V(BR)DSS RDS(on) max. ID
175°C Operating Temperature Fast Switchi.
this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance pe.
Specifically designed for Automotive applications, this cellular design of HEXFET® Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggediz.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 238.22KB)