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AUIRF540ZS - Power MOSFET

Download the AUIRF540ZS datasheet PDF. This datasheet also covers the AUIRF540Z variant, as both devices belong to the same power mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area.

Features

  • Advanced Process Technology.
  • Ultra Low On-Resistance.
  • 175°C Operating Temperature.
  • Fast Switching.
  • Repetitive Avalanche Allowed up to Tjmax.
  • Lead-Free, RoHS Compliant.
  • Automotive Qualified.
  •  .

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (AUIRF540Z-Infineon.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
AUIRF540ZS HEXFET Power MOSFET International Rectifier
AUIRF540Z HEXFET Power MOSFET International Rectifier
AUIRF5210S Power MOSFET International Rectifier
AUIRF1010EZ Power MOSFET International Rectifier
AUIRF1010EZL Power MOSFET International Rectifier

Other Datasheets by Infineon

Part Number Description
AUIRF540Z Power MOSFET
AUIRF5210S Power MOSFET
AUIRF1010EZ Power MOSFET
AUIRF1010EZL Power MOSFET
AUIRF1010EZS Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
  AUTOMOTIVE GRADE AUIRF540Z AUIRF540ZS Features  Advanced Process Technology  Ultra Low On-Resistance  175°C Operating Temperature  Fast Switching  Repetitive Avalanche Allowed up to Tjmax  Lead-Free, RoHS Compliant  Automotive Qualified *   Description Specifically designed for Automotive applications, this HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in Automotive applications and wide variety of other applications. VDSS RDS(on) typ. max. ID 100V 21m 26.
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