F28F010 memory equivalent, 1024k (128k x 8) cmos flash memory.
g10% VCC Tolerance Maximum Latch-Up Immunity through EPI Processing
Y ETOXTM Nonvolatile Flash Technology EPROM-Compatible Process Base High-Volume Manufacturing Experien.
The 28F010 flash memory provides nonvolatility along with the capability to perform over 100 000 electrical chip-erasure.
Name and Function
ADDRESS INPUTS for memory addresses Addresses are internally latched during a write cycle
DATA INPUT OUTPUT Inputs data during memory write cycles outputs data during memory read cycles The data pins are active high and float to tri.
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