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IS64WV12816DBLS - 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

Download the IS64WV12816DBLS datasheet PDF (IS61WV12816DALL included). The manufacturer datasheet provides complete specifications, pinout details, electrical characteristics, and typical applications for 128k x 16 high speed asynchronous cmos static ram.

Description

as 131,072 words by 16 bits.

high-performance CMOS technology.

Features

  • HIGH SPEED: (IS61/64WV12816DALL/DBLL).
  • High-speed access time: 8, 10, 12, 20 ns.
  • Low Active Power: 135 mW (typical).
  • Low Standby Power: 12 µW (typical) CMOS standby LOW POWER: (IS61/64WV12816DALS/DBLS).
  • High-speed access time: 25, 35 ns.
  • Low Active Power: 55 mW (typical).
  • Low Standby Power: 12 µW (typical) CMOS standby.
  • Single power supply.
  • Vdd 1.65V to 2.2V (IS61WV12816DAxx).
  • Vdd 2.4V to 3.6V (IS61/64WV12816DBxx).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (IS61WV12816DALL_IntegratedSiliconSolution.pdf) that lists specifications for multiple related part numbers.

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Full PDF Text Transcription

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IS61WV12816DALL/DALS IS61WV12816DBLL/DBLS IS64WV12816DBLL/DBLS 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM JANUARY 2013 FEATURES HIGH SPEED: (IS61/64WV12816DALL/DBLL) • High-speed access time: 8, 10, 12, 20 ns • Low Active Power: 135 mW (typical) • Low Standby Power: 12 µW (typical) CMOS standby LOW POWER: (IS61/64WV12816DALS/DBLS) • High-speed access time: 25, 35 ns • Low Active Power: 55 mW (typical) • Low Standby Power: 12 µW (typical) CMOS standby • Single power supply — Vdd 1.65V to 2.2V (IS61WV12816DAxx) — Vdd 2.4V to 3.
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