IS64WV1288EEBLL Datasheet PDF - ISSI 256K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM Specs

IS64WV1288EEBLL - 256K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM

This page provides the datasheet information for the IS64WV1288EEBLL, a member of the IS61WV1288EEBLL 256K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM family.

Datasheet Summary

Description

technology.

Features

High-speed access time: 8, 10 ns.
Low Active Power: 85 mW (typical).
Low Standby Power: 7 mW (typical) CMOS standby.
Single power supply.
Fully static operation: no clock or refresh required.
Three state outputs.
Industrial and Automotive temperature support.
Lead-free available.
Error Detection and Error Correction.

Datasheet Details

Part number	IS64WV1288EEBLL
Manufacturer	ISSI
File Size	509.49 KB
Description	256K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM
Datasheet	IS64WV1288EEBLL Datasheet
Additional preview pages of the IS64WV1288EEBLL datasheet.

📁 Similar Datasheet

IS64WV12816DBLL - 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM (Integrated Silicon Solution)

IS64WV12816DBLS - 128K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM (Integrated Silicon Solution)

IS64WV51216BLL - 512K x 16 HIGH-SPEED ASYNCHRONOUS CMOS STATIC RAM (Integrated Silicon Solution)

IS64C25616AL - 256K x 16 HIGH-SPEED CMOS STATIC RAM (Integrated Silicon Solution)

IS64C25616AS - 256K x 16 HIGH-SPEED CMOS STATIC RAM (Integrated Silicon Solution)

IS64C6416AL - 64K x 16 HIGH-SPEED CMOS STATIC RAM (Integrated Silicon Solution)

IS64LPS12832A - 4Mb SYNCHRONOUS PIPELINED SINGLE CYCLE DESELECT STATIC RAM (Integrated Silicon Solution)

IS64LPS12836A - 4Mb SYNCHRONOUS PIPELINED SINGLE CYCLE DESELECT STATIC RAM (Integrated Silicon Solution)

IS64LPS25618A - 4Mb SYNCHRONOUS PIPELINED SINGLE CYCLE DESELECT STATIC RAM (Integrated Silicon Solution)

IS64LV51216 - (IS61LV51216 / IS64LV51216) 512K x 16 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM (Integrated Silicon Solution)

Full PDF Text Transcription

Click to expand full text

IS61WV1288EEBLL IS64WV1288EEBLL 128K x 8 HIGH SPEED ASYNCHRONOUS CMOS STATIC RAM WITH ECC MAY 2020 FEATURES • High-speed access time: 8, 10 ns • Low Active Power: 85 mW (typical) • Low Standby Power: 7 mW (typical) CMOS standby • Single power supply • Fully static operation: no clock or refresh required • Three state outputs • Industrial and Automotive temperature support • Lead-free available • Error Detection and Error Correction DESCRIPTION The ISSI IS61/64WV1288EEBLL is a high-speed, 1,048,576-bit static RAMs organized as 131,072 words by 8 bits.It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices.

Published: Jan 2, 2014 |