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IS61VF10018, IS61VF51232 - 512K x 32 Synchronous Flow-through Static RAM

IS61VF10018 Description

IS61VF51232 IS61VF51236 IS61VF10018 512K x 32, 512K x 36, 1024K x 18 SYNCHRONOUS FLOW-THROUGH STATIC RAM ISSI ® ADVANCE INFORMATION October 2001 F.
The ISSI IS61VF51232, IS61VF51236, and IS61VF10018 are high-speed, low-power synchronous static RAMs designed to provide burstable, high-performance m.

IS61VF10018 Features

* Internal self-timed write cycle
* Individual Byte Write Control and Global Write
* Clock controlled, registered address, data and control
* Linear burst sequence control using MODE input
* Three chip enable option for simple depth expansion and address pipel

IS61VF10018 Applications

* The IS61VF51232 is organized as 524,288 words by 32 bits and the IS61VF51236 is organized as 524,288 words by 36 bits. The IS61VF10018 is organized as 1,048,576 words by 18 bits. Fabricated with ISSI's advanced CMOS technology, the device integrates a 2-bit burst counter, high-speed SRAM core, and

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This datasheet PDF includes multiple part numbers: IS61VF10018, IS61VF51232. Please refer to the document for exact specifications by model.
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Datasheet Details

Part number
IS61VF10018, IS61VF51232
Manufacturer
Integrated Silicon Solution
File Size
215.08 KB
Datasheet
IS61VF51232_IntegratedSiliconSolution.pdf
Description
512K x 32 Synchronous Flow-through Static RAM
Note
This datasheet PDF includes multiple part numbers: IS61VF10018, IS61VF51232.
Please refer to the document for exact specifications by model.

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512K Synchronous Flow-through Static RAM Integrated Silicon Solution
Integrated Silicon Solution IS61VF10018-like datasheet